N-channel transistor, 3.7m Ohms, TO-220, TO-220AB, 100V, 130A, 60.4k Ohms, 250uA - IRFB4110PBF

N-channel transistor, 3.7m Ohms, TO-220, TO-220AB, 100V, 130A, 60.4k Ohms, 250uA - IRFB4110PBF. N-channel transistor, 3.7m Ohms, TO-220, TO-220AB, 100V, 130A, 60.4k Ohms, 250uA. On-resistance Rds On: 3.7m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. ID (T=100°C): 130A. ID (T=25°C): 60.4k Ohms. Idss (max): 250uA. Number of terminals: 3. Pd (Power Dissipation, Max): 370W. RoHS: yes. Weight: 1.99g. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 78 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. C(in): 9620pF. Cost): 670pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: PDP Switch. G-S Protection: no. Id(imp): 670A. IDss (min): 20uA. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 12/08/2025, 14:08.