Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 10.01$ | 10.82$ |
2 - 2 | 9.51$ | 10.28$ |
3 - 4 | 9.21$ | 9.96$ |
5 - 9 | 9.01$ | 9.74$ |
10 - 19 | 8.81$ | 9.52$ |
20 - 29 | 8.51$ | 9.20$ |
30 - 76 | 8.21$ | 8.88$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 10.01$ | 10.82$ |
2 - 2 | 9.51$ | 10.28$ |
3 - 4 | 9.21$ | 9.96$ |
5 - 9 | 9.01$ | 9.74$ |
10 - 19 | 8.81$ | 9.52$ |
20 - 29 | 8.51$ | 9.20$ |
30 - 76 | 8.21$ | 8.88$ |
N-channel transistor, 74A, 104A, 250uA, 0.0093 Ohms, TO-220, TO-220AB, 150V - IRFB4115. N-channel transistor, 74A, 104A, 250uA, 0.0093 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 74A. ID (T=25°C): 104A. Idss (max): 250uA. On-resistance Rds On: 0.0093 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 5270pF. Cost): 490pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 86 ns. Type of transistor: MOSFET. Function: High Efficiency Synchronous Rectification in SMPS, High Speed Power Switching. G-S Protection: no. Id(imp): 420A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 380W. RoHS: yes. Weight: 1.99g. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 41 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 3V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 18/06/2025, 13:25.
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