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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 2.3A, 3.6A, 250uA, 2.2 Ohms, TO-220, TO-220AB, 600V - IRFBC30A

N-channel transistor, 2.3A, 3.6A, 250uA, 2.2 Ohms, TO-220, TO-220AB, 600V - IRFBC30A
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 2.53$ 2.73$
5 - 9 2.41$ 2.61$
10 - 24 2.28$ 2.46$
25 - 47 2.15$ 2.32$
Quantity U.P
1 - 4 2.53$ 2.73$
5 - 9 2.41$ 2.61$
10 - 24 2.28$ 2.46$
25 - 47 2.15$ 2.32$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 47
Set of 1

N-channel transistor, 2.3A, 3.6A, 250uA, 2.2 Ohms, TO-220, TO-220AB, 600V - IRFBC30A. N-channel transistor, 2.3A, 3.6A, 250uA, 2.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 250uA. On-resistance Rds On: 2.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 510pF. Cost): 70pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 14A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 9.8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 30/04/2025, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 102
IRFBC30

IRFBC30

N-channel transistor, 2.3A, 3.6A, 500uA, 2.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.3A. ID (...
IRFBC30
N-channel transistor, 2.3A, 3.6A, 500uA, 2.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 500uA. On-resistance Rds On: 2.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 660pF. Cost): 86pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 14A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRFBC30
N-channel transistor, 2.3A, 3.6A, 500uA, 2.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 500uA. On-resistance Rds On: 2.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 660pF. Cost): 86pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 14A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
2.25$ VAT incl.
(2.08$ excl. VAT)
2.25$

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