Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.88$ | 2.03$ |
5 - 9 | 1.79$ | 1.93$ |
10 - 24 | 1.65$ | 1.78$ |
25 - 49 | 1.52$ | 1.64$ |
50 - 99 | 1.48$ | 1.60$ |
100 - 249 | 2.02$ | 2.18$ |
250 - 521 | 2.41$ | 2.61$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.88$ | 2.03$ |
5 - 9 | 1.79$ | 1.93$ |
10 - 24 | 1.65$ | 1.78$ |
25 - 49 | 1.52$ | 1.64$ |
50 - 99 | 1.48$ | 1.60$ |
100 - 249 | 2.02$ | 2.18$ |
250 - 521 | 2.41$ | 2.61$ |
N-channel transistor, 60V, 2.5A, 60V, DIP4 - IRFD024PBF. N-channel transistor, 60V, 2.5A, 60V, DIP4. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 2.5A. Vdss (Drain to Source Voltage): 60V. Housing: DIP4. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 1.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 640pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 2.5A. Gate/source voltage Vgs: 100m Ohms / 1.5A / 10V. Gate/source voltage Vgs max: -20V. Max: 1.3W. Mounting Type: THT. Quantity in stock updated on 30/04/2025, 02:25.
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