N-channel transistor IRFD220, DIP4
Quantity
Unit price
1-4
5.59$
5-9
4.01$
10-19
3.77$
20-49
3.62$
50+
3.47$
| Quantity in stock: 25 |
N-channel transistor IRFD220, DIP4. Housing: DIP4. Assembly/installation: THT. Charge: 14nC. Drain current: 0.5A. 800mA. Drain-source voltage: 200V. Gate-source voltage: ±20V. Polarity: unipolar. Power: 1W. RoHS: yes. Type of transistor: N-MOSFET. Original product from manufacturer: Vishay. Quantity in stock updated on 13/11/2025, 04:39
IRFD220
11 parameters
Housing
DIP4
Assembly/installation
THT
Charge
14nC
Drain current
0.5A
Drain-source voltage
200V
Gate-source voltage
±20V
Polarity
unipolar
Power
1W
RoHS
yes
Type of transistor
N-MOSFET
Original product from manufacturer
Vishay