N-channel transistor, 0.38A, 0.8A, 250uA, 0.8 Ohms, DIP, DH-1 house, DIP-4, 200V - IRFD220PBF

Quantity	excl. VAT	VAT incl.
1 - 4	1.74$	1.88$
5 - 9	1.65$	1.78$
10 - 24	1.57$	1.70$
25 - 49	1.48$	1.60$
50 - 99	1.54$	1.66$
100 - 109	1.60$	1.73$

Quantity	U.P
1 - 4	1.74$	1.88$
5 - 9	1.65$	1.78$
10 - 24	1.57$	1.70$
25 - 49	1.48$	1.60$
50 - 99	1.54$	1.66$
100 - 109	1.60$	1.73$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 109

Set of 1

N-channel transistor, 0.38A, 0.8A, 250uA, 0.8 Ohms, DIP, DH-1 house, DIP-4, 200V - IRFD220PBF. N-channel transistor, 0.38A, 0.8A, 250uA, 0.8 Ohms, DIP, DH-1 house, DIP-4, 200V. ID (T=100°C): 0.38A. ID (T=25°C): 0.8A. Idss (max): 250uA. On-resistance Rds On: 0.8 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 200V. RoHS: yes. C(in): 22pF. Cost): 53pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Id(imp): 6.4A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 7.2 ns. Technology: third-generation power MOSFET transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 30/04/2025, 02:25.

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