Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.54$ | 2.75$ |
5 - 9 | 2.41$ | 2.61$ |
10 - 24 | 2.29$ | 2.48$ |
25 - 31 | 2.16$ | 2.33$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.54$ | 2.75$ |
5 - 9 | 2.41$ | 2.61$ |
10 - 24 | 2.29$ | 2.48$ |
25 - 31 | 2.16$ | 2.33$ |
N-channel transistor, 1.1A, 1.7A, 500uA, 4.4 Ohms, TO-220FP, TO-220F, 600V - IRFIBC20G. N-channel transistor, 1.1A, 1.7A, 500uA, 4.4 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 1.1A. ID (T=25°C): 1.7A. Idss (max): 500uA. On-resistance Rds On: 4.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 350pF. Cost): 48pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 290ms. Type of transistor: MOSFET. Id(imp): 6A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 30/04/2025, 05:25.
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