Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.20$ | 1.30$ |
5 - 9 | 1.14$ | 1.23$ |
10 - 24 | 1.11$ | 1.20$ |
25 - 49 | 1.08$ | 1.17$ |
50 - 99 | 1.06$ | 1.15$ |
100 - 118 | 1.02$ | 1.10$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.20$ | 1.30$ |
5 - 9 | 1.14$ | 1.23$ |
10 - 24 | 1.11$ | 1.20$ |
25 - 49 | 1.08$ | 1.17$ |
50 - 99 | 1.06$ | 1.15$ |
100 - 118 | 1.02$ | 1.10$ |
N-channel transistor, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V - IRFR110. N-channel transistor, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 250uA. On-resistance Rds On: 0.54 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. C(in): 180pF. Cost): 80pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 17A. IDss (min): 25uA. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer International Rectifier. Quantity in stock updated on 18/06/2025, 04:25.
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