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N-channel transistor, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V - IRFR110

N-channel transistor, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V - IRFR110
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Quantity excl. VAT VAT incl.
1 - 4 1.20$ 1.30$
5 - 9 1.14$ 1.23$
10 - 24 1.11$ 1.20$
25 - 49 1.08$ 1.17$
50 - 99 1.06$ 1.15$
100 - 118 1.02$ 1.10$
Quantity U.P
1 - 4 1.20$ 1.30$
5 - 9 1.14$ 1.23$
10 - 24 1.11$ 1.20$
25 - 49 1.08$ 1.17$
50 - 99 1.06$ 1.15$
100 - 118 1.02$ 1.10$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 118
Set of 1

N-channel transistor, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V - IRFR110. N-channel transistor, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 250uA. On-resistance Rds On: 0.54 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. C(in): 180pF. Cost): 80pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 17A. IDss (min): 25uA. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer International Rectifier. Quantity in stock updated on 18/06/2025, 04:25.

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