N-channel transistor IRFR220, TO252AA, DPAK
Quantity
Unit price
1-4
2.36$
5-9
1.48$
10-19
1.28$
20-49
1.18$
50+
1.09$
| Quantity in stock: 50 |
N-channel transistor IRFR220, TO252AA, DPAK. Housing: TO252AA, DPAK. Assembly/installation: SMD. Charge: 15nC. Drain current: 5A. Drain-source voltage: 200V. Gate-source voltage: 20V, ±20V. Housing thermal resistance: 3.5K/W. Polarity: unipolar. Power: 43W. RoHS: yes. Technology: HEXFET®. Type of transistor: N-MOSFET, HEXFET. Original product from manufacturer: Infineon (irf). Quantity in stock updated on 02/01/2026, 03:26
IRFR220
13 parameters
Housing
TO252AA, DPAK
Assembly/installation
SMD
Charge
15nC
Drain current
5A
Drain-source voltage
200V
Gate-source voltage
20V, ±20V
Housing thermal resistance
3.5K/W
Polarity
unipolar
Power
43W
RoHS
yes
Technology
HEXFET®
Type of transistor
N-MOSFET, HEXFET
Original product from manufacturer
Infineon (irf)