Electronic components and equipment, for businesses and individuals

N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V - IRG4BC30UD

N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V - IRG4BC30UD
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 10.72$ 11.59$
2 - 2 10.18$ 11.00$
3 - 4 9.65$ 10.43$
5 - 9 9.11$ 9.85$
10 - 19 8.89$ 9.61$
20 - 29 8.68$ 9.38$
30 - 84 8.36$ 9.04$
Quantity U.P
1 - 1 10.72$ 11.59$
2 - 2 10.18$ 11.00$
3 - 4 9.65$ 10.43$
5 - 9 9.11$ 9.85$
10 - 19 8.89$ 9.61$
20 - 29 8.68$ 9.38$
30 - 84 8.36$ 9.04$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 84
Set of 1

N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V - IRG4BC30UD. N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 73pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 42 ns. Function: UltraFast CoPack IGBT. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG4BC30UD. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.95V. Maximum saturation voltage VCE(sat): 2.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. CE diode: yes. Germanium diode: no. Quantity in stock updated on 30/04/2025, 00:25.

Information and technical help

By phone :

Payment and delivery

Delivery in 2-3 days, with postal tracking!

Subscribe to the newsletter

I agree to receive emails, and I understand that I can unsubscribe at any time after subscribing.

All rights reserved, RPtronics, 2024.