Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 10.72$ | 11.59$ |
2 - 2 | 10.18$ | 11.00$ |
3 - 4 | 9.65$ | 10.43$ |
5 - 9 | 9.11$ | 9.85$ |
10 - 19 | 8.89$ | 9.61$ |
20 - 29 | 8.68$ | 9.38$ |
30 - 84 | 8.36$ | 9.04$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 10.72$ | 11.59$ |
2 - 2 | 10.18$ | 11.00$ |
3 - 4 | 9.65$ | 10.43$ |
5 - 9 | 9.11$ | 9.85$ |
10 - 19 | 8.89$ | 9.61$ |
20 - 29 | 8.68$ | 9.38$ |
30 - 84 | 8.36$ | 9.04$ |
N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V - IRG4BC30UD. N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 73pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 42 ns. Function: UltraFast CoPack IGBT. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG4BC30UD. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.95V. Maximum saturation voltage VCE(sat): 2.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. CE diode: yes. Germanium diode: no. Quantity in stock updated on 30/04/2025, 00:25.
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