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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V - IRG4PC40KD

N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V - IRG4PC40KD
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 9.35$ 10.11$
2 - 2 8.88$ 9.60$
3 - 4 8.42$ 9.10$
5 - 9 7.95$ 8.59$
10 - 19 7.76$ 8.39$
20 - 29 7.57$ 8.18$
30 - 51 7.29$ 7.88$
Quantity U.P
1 - 1 9.35$ 10.11$
2 - 2 8.88$ 9.60$
3 - 4 8.42$ 9.10$
5 - 9 7.95$ 8.59$
10 - 19 7.76$ 8.39$
20 - 29 7.57$ 8.18$
30 - 51 7.29$ 7.88$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 51
Set of 1

N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V - IRG4PC40KD. N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1600pF. Cost): 130pF. Channel type: N. Trr Diode (Min.): 42 ns. Collector current: 42A. Ic(pulse): 84A. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 53 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.6V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Ultra Fast, for high operating frequencies 8-40kHz. CE diode: yes. Germanium diode: no. Quantity in stock updated on 30/04/2025, 00:25.

Technical documentation

Equivalent products :

Quantity in stock : 1
HGTG20N60B3D

HGTG20N60B3D

N-channel transistor, 20A, TO-247, TO-247AC, 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (acco...
HGTG20N60B3D
N-channel transistor, 20A, TO-247, TO-247AC, 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 45 ns. Function: UFS Series IGBT with Anti-Parallel Hyperfast Diode. Collector current: 40A. Ic(pulse): 160A. Marking on the case: G20N60B3D. Number of terminals: 3. Pd (Power Dissipation, Max): 165W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 25 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Spec info: Typical Fall Time 140ns at 150°C. CE diode: yes. Germanium diode: no
HGTG20N60B3D
N-channel transistor, 20A, TO-247, TO-247AC, 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 45 ns. Function: UFS Series IGBT with Anti-Parallel Hyperfast Diode. Collector current: 40A. Ic(pulse): 160A. Marking on the case: G20N60B3D. Number of terminals: 3. Pd (Power Dissipation, Max): 165W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 25 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Spec info: Typical Fall Time 140ns at 150°C. CE diode: yes. Germanium diode: no
Set of 1
13.30$ VAT incl.
(12.30$ excl. VAT)
13.30$

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