N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V - IRG4PH40U

Quantity	excl. VAT	VAT incl.
1 - 1	9.26$	10.01$
2 - 2	8.79$	9.50$
3 - 4	8.33$	9.00$
5 - 9	7.87$	8.51$
10 - 19	7.68$	8.30$
20 - 29	7.50$	8.11$
30 - 35	7.22$	7.80$

Quantity	U.P
1 - 1	9.26$	10.01$
2 - 2	8.79$	9.50$
3 - 4	8.33$	9.00$
5 - 9	7.87$	8.51$
10 - 19	7.68$	8.30$
20 - 29	7.50$	8.11$
30 - 35	7.22$	7.80$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 35

Set of 1

N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V - IRG4PH40U. N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 21A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 1800pF. Cost): 120pF. Channel type: N. Function: Up to 40kHz in hard switching,>200kHz res.mode. Collector current: 41A. Ic(pulse): 82A. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 24 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.43V. Maximum saturation voltage VCE(sat): 3.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. CE diode: no. Germanium diode: no. Quantity in stock updated on 30/04/2025, 00:25.

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