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N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V - IRG4PH40U

N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V - IRG4PH40U
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Quantity excl. VAT VAT incl.
1 - 1 9.26$ 10.01$
2 - 2 8.79$ 9.50$
3 - 4 8.52$ 9.21$
5 - 9 8.33$ 9.00$
10 - 19 8.15$ 8.81$
20 - 29 7.87$ 8.51$
30 - 35 7.59$ 8.20$
Quantity U.P
1 - 1 9.26$ 10.01$
2 - 2 8.79$ 9.50$
3 - 4 8.52$ 9.21$
5 - 9 8.33$ 9.00$
10 - 19 8.15$ 8.81$
20 - 29 7.87$ 8.51$
30 - 35 7.59$ 8.20$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 35
Set of 1

N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V - IRG4PH40U. N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 21A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 1800pF. Cost): 120pF. CE diode: no. Channel type: N. Function: Up to 40kHz in hard switching,>200kHz res.mode. Germanium diode: no. Collector current: 41A. Ic(pulse): 82A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 24 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.43V. Maximum saturation voltage VCE(sat): 3.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Original product from manufacturer International Rectifier. Quantity in stock updated on 17/06/2025, 23:25.

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