N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V - IRG4PH50KD

Quantity	excl. VAT	VAT incl.
1 - 1	24.62$	26.61$
2 - 2	23.39$	25.28$
3 - 4	22.16$	23.95$
5 - 9	20.93$	22.63$
10 - 12	20.44$	22.10$

Quantity	U.P
1 - 1	24.62$	26.61$
2 - 2	23.39$	25.28$
3 - 4	22.16$	23.95$
5 - 9	20.93$	22.63$
10 - 12	20.44$	22.10$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 12

Set of 1

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V - IRG4PH50KD. N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1220V. C(in): 2800pF. Cost): 140pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 90 ns. Collector current: 45A. Ic(pulse): 90A. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 87 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). CE diode: yes. Germanium diode: no. Quantity in stock updated on 30/04/2025, 00:25.

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