Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 13.06$ | 14.12$ |
2 - 2 | 12.41$ | 13.42$ |
3 - 4 | 12.14$ | 13.12$ |
5 - 9 | 11.75$ | 12.70$ |
10 - 19 | 11.49$ | 12.42$ |
20 - 29 | 11.10$ | 12.00$ |
30 - 36 | 10.71$ | 11.58$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 13.06$ | 14.12$ |
2 - 2 | 12.41$ | 13.42$ |
3 - 4 | 12.14$ | 13.12$ |
5 - 9 | 11.75$ | 12.70$ |
10 - 19 | 11.49$ | 12.42$ |
20 - 29 | 11.10$ | 12.00$ |
30 - 36 | 10.71$ | 11.58$ |
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V - IRG4PH50U. N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 3600pF. Cost): 160pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 180A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 180A. Marking on the case: IRG4PH50U. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: td(on) 35ns, td(off) 200ns, TJ=25°C. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 35 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.56V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Original product from manufacturer International Rectifier. Quantity in stock updated on 17/06/2025, 23:25.
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