N-channel transistor, 14A, TO-263, 400V - IRGS14C40LPBF
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 10.76$ | 11.63$ |
| 2 - 2 | 10.22$ | 11.05$ |
| 3 - 4 | 9.90$ | 10.70$ |
| 5 - 9 | 9.68$ | 10.46$ |
| 10 - 19 | 9.47$ | 10.24$ |
| 20 - 29 | 9.14$ | 9.88$ |
| 30+ | 8.82$ | 9.53$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 10.76$ | 11.63$ |
| 2 - 2 | 10.22$ | 11.05$ |
| 3 - 4 | 9.90$ | 10.70$ |
| 5 - 9 | 9.68$ | 10.46$ |
| 10 - 19 | 9.47$ | 10.24$ |
| 20 - 29 | 9.14$ | 9.88$ |
| 30+ | 8.82$ | 9.53$ |
N-channel transistor, 14A, TO-263, 400V - IRGS14C40LPBF. N-channel transistor, 14A, TO-263, 400V. Ic(T=100°C): 14A. Housing (according to data sheet): TO-263. Collector/emitter voltage Vceo: 400V. C(in): 825pF. Cost): 150pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Germanium diode: no. Collector current: 20A. Note: > 6KV ESD Gate Protection. Marking on the case: GS14C40L. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Spec info: IGBT with on-chip Gate-Emitter and Gate-Collector. Assembly/installation: surface-mounted component (SMD). Td(off): 8.3 ns. Td(on): 1.35 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 1.3V. Gate/emitter voltage VGE(th)max.: 2.2V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 17/06/2025, 19:25.
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