N-channel transistor, 3.4A, 4.2A, 25uA, 0.035 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 20V - IRLML2502

Quantity	excl. VAT	VAT incl.
1 - 9	0.41$	0.44$
10 - 24	0.39$	0.42$
25 - 49	0.37$	0.40$
50 - 99	0.35$	0.38$
100 - 249	0.33$	0.36$
250 - 499	0.31$	0.34$
500 - 1348	0.28$	0.30$

Quantity	U.P
1 - 9	0.41$	0.44$
10 - 24	0.39$	0.42$
25 - 49	0.37$	0.40$
50 - 99	0.35$	0.38$
100 - 249	0.33$	0.36$
250 - 499	0.31$	0.34$
500 - 1348	0.28$	0.30$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 1348

Set of 1

N-channel transistor, 3.4A, 4.2A, 25uA, 0.035 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 20V - IRLML2502. N-channel transistor, 3.4A, 4.2A, 25uA, 0.035 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 20V. ID (T=100°C): 3.4A. ID (T=25°C): 4.2A. Idss (max): 25uA. On-resistance Rds On: 0.035 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO-236AB ) ( Micro3 ). Voltage Vds(max): 20V. C(in): 740pF. Cost): 90pF. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Trr Diode (Min.): 16 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 33A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 54 ns. Td(on): 7.5 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 12V. Vgs(th) min.: 0.6V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 29/04/2025, 16:25.

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