N-channel transistor, 7A, 10A, 250uA, 0.185 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V - IRLR120N

Quantity	excl. VAT	VAT incl.
1 - 4	1.60$	1.73$
5 - 9	1.52$	1.64$
10 - 24	1.44$	1.56$
25 - 49	1.36$	1.47$
50 - 67	1.33$	1.44$

Quantity	U.P
1 - 4	1.60$	1.73$
5 - 9	1.52$	1.64$
10 - 24	1.44$	1.56$
25 - 49	1.36$	1.47$
50 - 67	1.33$	1.44$

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Quantity in stock : 67

Set of 1

N-channel transistor, 7A, 10A, 250uA, 0.185 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V - IRLR120N. N-channel transistor, 7A, 10A, 250uA, 0.185 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V. ID (T=100°C): 7A. ID (T=25°C): 10A. Idss (max): 250uA. On-resistance Rds On: 0.185 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 100V. C(in): 440pF. Cost): 97pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 35A. IDss (min): 25uA. Equivalents: IRLR120NTRPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 48W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 23 ns. Td(on): 4 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Spec info: Gate control by logic level. G-S Protection: no. Quantity in stock updated on 29/04/2025, 16:25.

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