N-channel transistor IXFA130N10T2, 130A, 500uA, 0.01 Ohms, D2PAK ( TO-263 ), TO-263, 100V. ID (T=25°C): 130A. Idss (max): 500uA. On-resistance Rds On: 0.01 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263. Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 6600pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 640pF. Drain-source protection: yes. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 10uA. Id(imp): 300A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 360W. Quantity per case: 1. RoHS: yes. Td(off): 24 ns. Td(on): 16 ns. Technology: TrenchT2 HiPerFet Power MOSFET. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 2V. Original product from manufacturer: IXYS. Quantity in stock updated on 13/11/2025, 21:11