N-channel transistor IXFK48N50, TO-264 ( TOP-3L ), 500V, 48A, 2mA, 0.10 Ohms, TO-264AA, 500V. Housing: TO-264 ( TOP-3L ). Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 500V. ID (T=25°C): 48A. Idss (max): 2mA. On-resistance Rds On: 0.10 Ohms. Housing (according to data sheet): TO-264AA. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 8400pF. Channel type: N. Ciss Gate Capacitance [pF]: 8400pF. Component family: MOSFET, N-MOS. Conditioning unit: 25. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Cost): 900pF. Drain current Id (A) @ 25°C: 44A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.12 Ohms @ 22A. Drain-source protection: diode. Function: F-Class--MHz Switching. G-S Protection: no. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs: 20V. IDss (min): 400uA. Id(imp): 192A. Manufacturer's marking: IXFK48N50. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 500W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 500W. Quantity per case: 1. RoHS: yes. Spec info: dv/dt 5V/ns. Switch-off delay tf[nsec.]: 100 ns. Switch-on time ton [nsec.]: 30 ns. Td(off): 100 ns. Td(on): 30 ns. Technology: HiPerFet Power MOSFET. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: IXYS. Quantity in stock updated on 13/11/2025, 21:11