Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 18.41$ | 19.90$ |
2 - 2 | 17.49$ | 18.91$ |
3 - 4 | 16.57$ | 17.91$ |
5 - 9 | 15.65$ | 16.92$ |
10 - 14 | 15.28$ | 16.52$ |
15 - 19 | 14.92$ | 16.13$ |
20 - 36 | 14.36$ | 15.52$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 18.41$ | 19.90$ |
2 - 2 | 17.49$ | 18.91$ |
3 - 4 | 16.57$ | 17.91$ |
5 - 9 | 15.65$ | 16.92$ |
10 - 14 | 15.28$ | 16.52$ |
15 - 19 | 14.92$ | 16.13$ |
20 - 36 | 14.36$ | 15.52$ |
N-channel transistor, 24A, TO-247, TO-247 ( AD ), 600V - IXGH24N60CD1. N-channel transistor, 24A, TO-247, TO-247 ( AD ), 600V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ). Collector/emitter voltage Vceo: 600V. C(in): 1500pF. Cost): 170pF. Channel type: N. Trr Diode (Min.): 130 ns. Function: HiPerFAST IGBT with Diode. Collector current: 48A. Ic(pulse): 80A. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 15 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5.5V. Note: HiPerFAST IGBT transistor. CE diode: yes. Germanium diode: no. Quantity in stock updated on 29/04/2025, 11:25.
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