N-channel transistor, 32A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V - IXGH32N60BU1

Quantity	excl. VAT	VAT incl.
1 - 1	26.30$	28.43$
2 - 2	24.98$	27.00$
3 - 4	23.67$	25.59$
5 - 9	22.35$	24.16$
10 - 14	21.83$	23.60$
15 - 19	21.30$	23.03$
20 - 23	20.51$	22.17$

Quantity	U.P
1 - 1	26.30$	28.43$
2 - 2	24.98$	27.00$
3 - 4	23.67$	25.59$
5 - 9	22.35$	24.16$
10 - 14	21.83$	23.60$
15 - 19	21.30$	23.03$
20 - 23	20.51$	22.17$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 23

Set of 1

N-channel transistor, 32A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V - IXGH32N60BU1. N-channel transistor, 32A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V. Ic(T=100°C): 32A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ) HiPerFAST IGBT. Collector/emitter voltage Vceo: 600V. C(in): 2700pF. Cost): 270pF. Channel type: N. Trr Diode (Min.): 120ns. Function: Ic 60A @ 25°C, 32A @ 90°C, Icm 120A (pulsed). Collector current: 60A. Ic(pulse): 60.4k Ohms. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. CE diode: yes. Quantity in stock updated on 29/04/2025, 14:25.

Technical documentation