Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 13.70$ | 14.81$ |
2 - 2 | 13.01$ | 14.06$ |
3 - 4 | 12.74$ | 13.77$ |
5 - 9 | 12.33$ | 13.33$ |
10 - 19 | 12.05$ | 13.03$ |
20 - 29 | 11.64$ | 12.58$ |
30+ | 11.23$ | 12.14$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 13.70$ | 14.81$ |
2 - 2 | 13.01$ | 14.06$ |
3 - 4 | 12.74$ | 13.77$ |
5 - 9 | 12.33$ | 13.33$ |
10 - 19 | 12.05$ | 13.03$ |
20 - 29 | 11.64$ | 12.58$ |
30+ | 11.23$ | 12.14$ |
N-channel transistor, 40A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V - IXGH40N60B2. N-channel transistor, 40A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ) HiPerFAST IGBT. Collector/emitter voltage Vceo: 600V. C(in): 2560pF. Cost): 180pF. CE diode: no. Channel type: N. Germanium diode: no. Collector current: 75A. Ic(pulse): 200A. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 18 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Original product from manufacturer IXYS. Quantity in stock updated on 17/06/2025, 13:25.
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