Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.45$ | 4.81$ |
5 - 9 | 4.23$ | 4.57$ |
10 - 24 | 4.01$ | 4.33$ |
25 - 46 | 3.78$ | 4.09$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 4.45$ | 4.81$ |
5 - 9 | 4.23$ | 4.57$ |
10 - 24 | 4.01$ | 4.33$ |
25 - 46 | 3.78$ | 4.09$ |
N-channel transistor, 6.9A, 11A, 1uA, 0.45 Ohms, TO-220FP, TO220F, 650V - MDF11N65B. N-channel transistor, 6.9A, 11A, 1uA, 0.45 Ohms, TO-220FP, TO220F, 650V. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 1uA. On-resistance Rds On: 0.45 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO220F. Voltage Vds(max): 650V. C(in): 1650pF. Cost): 180pF. Channel type: N. Trr Diode (Min.): 355 ns. Type of transistor: MOSFET. Id(imp): 48A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 49.6W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 132 ns. Td(on): 27 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Function: SMPS, high Speed switching. Spec info: Ultra Low Gate Charge. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 29/04/2025, 12:25.
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