N-channel transistor, 8A, 10A, 1uA, 10A, 0.03 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 40V - P2804BDG

Quantity	excl. VAT	VAT incl.
1 - 4	2.76$	2.98$
5 - 9	2.62$	2.83$
10 - 24	2.48$	2.68$
25 - 49	2.35$	2.54$
50 - 99	2.29$	2.48$
100 - 249	2.24$	2.42$
250 - 779	2.13$	2.30$

Quantity	U.P
1 - 4	2.76$	2.98$
5 - 9	2.62$	2.83$
10 - 24	2.48$	2.68$
25 - 49	2.35$	2.54$
50 - 99	2.29$	2.48$
100 - 249	2.24$	2.42$
250 - 779	2.13$	2.30$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 779

Set of 1

N-channel transistor, 8A, 10A, 1uA, 10A, 0.03 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 40V - P2804BDG. N-channel transistor, 8A, 10A, 1uA, 10A, 0.03 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 40V. ID (T=100°C): 8A. ID (T=25°C): 10A. Idss: 1uA. Idss (max): 10A. On-resistance Rds On: 0.03 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 40V. C(in): 790pF. Cost): 175pF. Channel type: N. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement. Id(imp): 40A. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11.8 ns. Td(on): 2.2 ns. Technology: Field Effect Transistor. Quantity per case: 1. Drain-source protection : no. G-S Protection: no. Quantity in stock updated on 29/04/2025, 05:25.

Technical documentation