Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.21$ | 2.39$ |
5 - 9 | 2.10$ | 2.27$ |
10 - 24 | 1.99$ | 2.15$ |
25 - 49 | 1.88$ | 2.03$ |
50 - 99 | 1.83$ | 1.98$ |
100 - 249 | 1.79$ | 1.93$ |
250 - 363 | 1.70$ | 1.84$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.21$ | 2.39$ |
5 - 9 | 2.10$ | 2.27$ |
10 - 24 | 1.99$ | 2.15$ |
25 - 49 | 1.88$ | 2.03$ |
50 - 99 | 1.83$ | 1.98$ |
100 - 249 | 1.79$ | 1.93$ |
250 - 363 | 1.70$ | 1.84$ |
N-channel transistor, 50A, 75A, 25uA, 75A, 5M Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 20V - P75N02LD. N-channel transistor, 50A, 75A, 25uA, 75A, 5M Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 20V. ID (T=100°C): 50A. ID (T=25°C): 75A. Idss: 25uA. Idss (max): 75A. On-resistance Rds On: 5M Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 20V. C(in): 5000pF. Cost): 1800pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 170A. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 7 ns. Technology: Field Effect Transistor. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 29/04/2025, 05:25.
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