Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 7.31$ | 7.90$ |
5 - 9 | 6.95$ | 7.51$ |
10 - 24 | 6.73$ | 7.28$ |
25 - 49 | 6.44$ | 6.96$ |
50 - 99 | 6.22$ | 6.72$ |
100+ | 6.00$ | 6.49$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 7.31$ | 7.90$ |
5 - 9 | 6.95$ | 7.51$ |
10 - 24 | 6.73$ | 7.28$ |
25 - 49 | 6.44$ | 6.96$ |
50 - 99 | 6.22$ | 6.72$ |
100+ | 6.00$ | 6.49$ |
N-channel transistor, 1.1A, 1.8A, 50uA, 2.7M Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 650V - Q67040-S4420. N-channel transistor, 1.1A, 1.8A, 50uA, 2.7M Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 650V. ID (T=100°C): 1.1A. ID (T=25°C): 1.8A. Idss (max): 50uA. On-resistance Rds On: 2.7M Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 650V. C(in): 200pF. Cost): 90pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 5.4A. IDss (min): 0.5uA. Marking on the case: 02N60C3. Number of terminals: 2. Pd (Power Dissipation, Max): 25W. Assembly/installation: surface-mounted component (SMD). Td(off): 45 ns. Td(on): 8 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 17/06/2025, 02:25.
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