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N-channel transistor, TO-3PN ( 2-16C1B ), TO-3PSG, 300V - RJH30H2DPK-M0

N-channel transistor, TO-3PN ( 2-16C1B ), TO-3PSG, 300V - RJH30H2DPK-M0
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Quantity excl. VAT VAT incl.
1 - 1 19.73$ 21.33$
2 - 2 18.75$ 20.27$
3 - 4 18.35$ 19.84$
5 - 9 17.76$ 19.20$
10 - 14 17.36$ 18.77$
15 - 19 16.77$ 18.13$
20 - 48 16.18$ 17.49$
Quantity U.P
1 - 1 19.73$ 21.33$
2 - 2 18.75$ 20.27$
3 - 4 18.35$ 19.84$
5 - 9 17.76$ 19.20$
10 - 14 17.36$ 18.77$
15 - 19 16.77$ 18.13$
20 - 48 16.18$ 17.49$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 48
Set of 1

N-channel transistor, TO-3PN ( 2-16C1B ), TO-3PSG, 300V - RJH30H2DPK-M0. N-channel transistor, TO-3PN ( 2-16C1B ), TO-3PSG, 300V. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PSG. Collector/emitter voltage Vceo: 300V. C(in): 1200pF. Cost): 80pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 23 ns. Compatibility: Samsung PS42C450B1WXXU. Function: High Speed ​​Power Switching. Germanium diode: no. Collector current: 35A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: trr 0.06us. Assembly/installation: PCB through-hole mounting. Td(off): 0.06 ns. Td(on): 0.02 ns. Technology: Trench gate and thin wafer technology G6H-II ser. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.4V. Maximum saturation voltage VCE(sat): 1.9V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Original product from manufacturer Renesas Technology. Quantity in stock updated on 17/06/2025, 04:25.

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