N-channel transistor SI9936BDY-E3, SO8, 30 v. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 30 v. Ciss Gate Capacitance [pF]: 550pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 4.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.035 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 3V. Manufacturer's marking: SI9936BDY. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.1W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 40 ns. Switch-on time ton [nsec.]: 15 ns. Original product from manufacturer: Vishay. Quantity in stock updated on 13/11/2025, 15:06