Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 133.51$ | 144.32$ |
2 - 2 | 126.83$ | 137.10$ |
3 - 4 | 124.16$ | 134.22$ |
5 - 9 | 121.49$ | 131.33$ |
10 - 14 | 120.16$ | 129.89$ |
15 - 19 | 118.82$ | 128.44$ |
20+ | 117.49$ | 127.01$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 133.51$ | 144.32$ |
2 - 2 | 126.83$ | 137.10$ |
3 - 4 | 124.16$ | 134.22$ |
5 - 9 | 121.49$ | 131.33$ |
10 - 14 | 120.16$ | 129.89$ |
15 - 19 | 118.82$ | 128.44$ |
20+ | 117.49$ | 127.01$ |
N-channel transistor, 90A, Other, Other, 600V - SKM100GAL123D. N-channel transistor, 90A, Other, Other, 600V. Ic(T=100°C): 90A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 600V. C(in): 5000pF. Cost): 720pF. CE diode: yes. Channel type: N. Function: High Power IGBT. Germanium diode: no. Collector current: 100A. Ic(pulse): 150A. Note: Half Bridge IGBT MTP (Warp Speed 60-100KHz). Number of terminals: 7. RoHS: yes. Spec info: Ic 114A @ 25°C, 50A @ 109°C, Icm 360A (pulsed). Td(off): 450 ns. Td(on): 30 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Original product from manufacturer Semikron. Quantity in stock updated on 16/06/2025, 23:25.
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