Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 424.18$ | 458.54$ |
2 - 2 | 402.97$ | 435.61$ |
3 - 4 | 394.49$ | 426.44$ |
5 - 7 | 386.01$ | 417.28$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 424.18$ | 458.54$ |
2 - 2 | 402.97$ | 435.61$ |
3 - 4 | 394.49$ | 426.44$ |
5 - 7 | 386.01$ | 417.28$ |
N-channel transistor, 330A, Other, Other, 1200V - SKM400GB126D. N-channel transistor, 330A, Other, Other, 1200V. Ic(T=100°C): 330A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 23.1pF. Cost): 1.9pF. CE diode: yes. Channel type: N. Function: High Power IGBT. Germanium diode: no. Collector current: 470A. Ic(pulse): 600A. Number of terminals: 7. Dimensions: 106.4x61.4x30.5mm. RoHS: yes. Spec info: IFSM--2200Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Td(off): 650 ns. Td(on): 330 ns. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.7V. Maximum saturation voltage VCE(sat): 2.15V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V. Original product from manufacturer Semikron. Quantity in stock updated on 17/06/2025, 00:25.
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