N-channel transistor SP0010-91630, 49A, 77.5A, 10uA, 0.041 Ohms, TO-247, TO-247, 650V

N-channel transistor SP0010-91630, 49A, 77.5A, 10uA, 0.041 Ohms, TO-247, TO-247, 650V

Quantity
Unit price
1-4
51.39$
5-9
48.60$
10-19
46.29$
20-29
44.52$
30+
41.93$
Equivalence available
Quantity in stock: 30

N-channel transistor SP0010-91630, 49A, 77.5A, 10uA, 0.041 Ohms, TO-247, TO-247, 650V. ID (T=100°C): 49A. ID (T=25°C): 77.5A. Idss (max): 10uA. On-resistance Rds On: 0.041 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 650V. Assembly/installation: PCB through-hole mounting. C(in): 8180pF. Channel type: N. Cost): 310pF. Drain-source protection: yes. Function: 'Increased MOSFET dv/dt ruggedness'. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 5uA. Id(imp): 267A. Marking on the case: 6R041P6. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 481W. Quantity per case: 1. RoHS: yes. Td(off): 90 ns. Td(on): 29 ns. Technology: CoolMOS ™ P6 Power Transistor. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 12/11/2025, 23:00

SP0010-91630
31 parameters
ID (T=100°C)
49A
ID (T=25°C)
77.5A
Idss (max)
10uA
On-resistance Rds On
0.041 Ohms
Housing
TO-247
Housing (according to data sheet)
TO-247
Voltage Vds(max)
650V
Assembly/installation
PCB through-hole mounting
C(in)
8180pF
Channel type
N
Cost)
310pF
Drain-source protection
yes
Function
'Increased MOSFET dv/dt ruggedness'
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
5uA
Id(imp)
267A
Marking on the case
6R041P6
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
481W
Quantity per case
1
RoHS
yes
Td(off)
90 ns
Td(on)
29 ns
Technology
CoolMOS ™ P6 Power Transistor
Trr Diode (Min.)
630 ns
Type of transistor
MOSFET
Vgs(th) max.
4.5V
Vgs(th) min.
3.5V
Original product from manufacturer
Infineon Technologies

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