Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.64$ | 3.93$ |
5 - 9 | 3.45$ | 3.73$ |
10 - 24 | 3.34$ | 3.61$ |
25 - 49 | 3.27$ | 3.53$ |
50 - 99 | 3.20$ | 3.46$ |
100 - 249 | 3.09$ | 3.34$ |
250+ | 2.98$ | 3.22$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.64$ | 3.93$ |
5 - 9 | 3.45$ | 3.73$ |
10 - 24 | 3.34$ | 3.61$ |
25 - 49 | 3.27$ | 3.53$ |
50 - 99 | 3.20$ | 3.46$ |
100 - 249 | 3.09$ | 3.34$ |
250+ | 2.98$ | 3.22$ |
N-channel transistor, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-262 ( I2-PAK ), TO-262, 650V - SPI07N60C3. N-channel transistor, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-262 ( I2-PAK ), TO-262, 650V. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 100uA. On-resistance Rds On: 0.54 Ohms. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Voltage Vds(max): 650V. C(in): 16pF. Cost): 30pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. G-S Protection: no. Id(imp): 21.9A. IDss (min): 0.5uA. Marking on the case: 07N60C3. Number of terminals: 3. Pd (Power Dissipation, Max): 83W. Assembly/installation: surface-mounted component (SMD). Td(off): 60 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 16/06/2025, 23:25.
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