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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V - SPP17N80C2

N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V - SPP17N80C2
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 7.55$ 8.16$
5 - 9 7.17$ 7.75$
10 - 24 6.95$ 7.51$
25 - 49 6.64$ 7.18$
50 - 99 6.42$ 6.94$
100 - 118 6.19$ 6.69$
Quantity U.P
1 - 4 7.55$ 8.16$
5 - 9 7.17$ 7.75$
10 - 24 6.95$ 7.51$
25 - 49 6.64$ 7.18$
50 - 99 6.42$ 6.94$
100 - 118 6.19$ 6.69$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 118
Set of 1

N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V - SPP17N80C2. N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: SPP17N80C2. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 16/06/2025, 21:25.

Technical documentation

Equivalent products :

Quantity in stock : 39
SPP17N80C3

SPP17N80C3

N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25...
SPP17N80C3
N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 2320pF. Cost): 1250pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: 17N80C3. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V
SPP17N80C3
N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 2320pF. Cost): 1250pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: 17N80C3. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V
Set of 1
13.57$ VAT incl.
(12.55$ excl. VAT)
13.57$

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