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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 2.8A, 4.5A, 50uA, 0.85 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 650V - SPU04N60C3

N-channel transistor, 2.8A, 4.5A, 50uA, 0.85 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 650V - SPU04N60C3
Quantity excl. VAT VAT incl.
1 - 4 6.38$ 6.90$
5 - 9 6.06$ 6.55$
10 - 24 5.74$ 6.20$
25 - 49 5.42$ 5.86$
50 - 99 5.29$ 5.72$
100+ 4.97$ 5.37$
Quantity U.P
1 - 4 6.38$ 6.90$
5 - 9 6.06$ 6.55$
10 - 24 5.74$ 6.20$
25 - 49 5.42$ 5.86$
50 - 99 5.29$ 5.72$
100+ 4.97$ 5.37$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 2.8A, 4.5A, 50uA, 0.85 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 650V - SPU04N60C3. N-channel transistor, 2.8A, 4.5A, 50uA, 0.85 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 650V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 650V. C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra low gate charge Extreme dv/dt rated. Id(imp): 13.5A. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 28/04/2025, 21:25.

Technical documentation

Equivalent products :

Quantity in stock : 50
SPP04N60C3

SPP04N60C3

N-channel transistor, 2.8A, 4.5A, 50uA, 85m Ohms, TO-220, TO-220-3-1, 650V. ID (T=100°C): 2.8A. ID ...
SPP04N60C3
N-channel transistor, 2.8A, 4.5A, 50uA, 85m Ohms, TO-220, TO-220-3-1, 650V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. On-resistance Rds On: 85m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Voltage Vds(max): 650V. C(in): 490pF. Cost): 160pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra Low Gate Charge High Peak Current Capability. Id(imp): 13.5A. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Spec info: Exceptional dv/dt capability. Drain-source protection : yes. G-S Protection: no
SPP04N60C3
N-channel transistor, 2.8A, 4.5A, 50uA, 85m Ohms, TO-220, TO-220-3-1, 650V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. On-resistance Rds On: 85m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Voltage Vds(max): 650V. C(in): 490pF. Cost): 160pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra Low Gate Charge High Peak Current Capability. Id(imp): 13.5A. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Spec info: Exceptional dv/dt capability. Drain-source protection : yes. G-S Protection: no
Set of 1
4.40$ VAT incl.
(4.07$ excl. VAT)
4.40$
Quantity in stock : 88
SPA04N60C3

SPA04N60C3

N-channel transistor, 2.8A, 4.5A, 50uA, 0.95 Ohms, TO-220FP, TO-220FP-3-1, 650V. ID (T=100°C): 2.8A...
SPA04N60C3
N-channel transistor, 2.8A, 4.5A, 50uA, 0.95 Ohms, TO-220FP, TO-220FP-3-1, 650V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. On-resistance Rds On: 0.95 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 650V. C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra Low Gate Charge High Peak Current Capability. Id(imp): 13.5A. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 31W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Note: Fully isolated package (2500VAC /1 minute). Spec info: Exceptional dv/dt capability. G-S Protection: no
SPA04N60C3
N-channel transistor, 2.8A, 4.5A, 50uA, 0.95 Ohms, TO-220FP, TO-220FP-3-1, 650V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. On-resistance Rds On: 0.95 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 650V. C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra Low Gate Charge High Peak Current Capability. Id(imp): 13.5A. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 31W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Note: Fully isolated package (2500VAC /1 minute). Spec info: Exceptional dv/dt capability. G-S Protection: no
Set of 1
3.56$ VAT incl.
(3.29$ excl. VAT)
3.56$

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