Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.03$ | 2.19$ |
5 - 9 | 1.93$ | 2.09$ |
10 - 24 | 1.83$ | 1.98$ |
25 - 49 | 1.72$ | 1.86$ |
50 - 99 | 1.68$ | 1.82$ |
100 - 249 | 1.64$ | 1.77$ |
250 - 1134 | 1.56$ | 1.69$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.03$ | 2.19$ |
5 - 9 | 1.93$ | 2.09$ |
10 - 24 | 1.83$ | 1.98$ |
25 - 49 | 1.72$ | 1.86$ |
50 - 99 | 1.68$ | 1.82$ |
100 - 249 | 1.64$ | 1.77$ |
250 - 1134 | 1.56$ | 1.69$ |
N-channel transistor, 1.9A, 3A, 1uA, 3A, 2.3 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 500V - STD4NK50ZT4. N-channel transistor, 1.9A, 3A, 1uA, 3A, 2.3 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 500V. ID (T=100°C): 1.9A. ID (T=25°C): 3A. Idss: 1uA. Idss (max): 3A. On-resistance Rds On: 2.3 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 500V. C(in): 310pF. Cost): 49pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 12A. Marking on the case: D4NK50Z. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 10 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Quantity per case: 1. G-S Protection: yes. Quantity in stock updated on 28/04/2025, 21:25.
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