Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 8.92$ | 9.64$ |
2 - 2 | 8.47$ | 9.16$ |
3 - 4 | 8.02$ | 8.67$ |
5 - 9 | 7.58$ | 8.19$ |
10 - 19 | 7.40$ | 8.00$ |
20 - 29 | 7.22$ | 7.80$ |
30 - 36 | 6.95$ | 7.51$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 8.92$ | 9.64$ |
2 - 2 | 8.47$ | 9.16$ |
3 - 4 | 8.02$ | 8.67$ |
5 - 9 | 7.58$ | 8.19$ |
10 - 19 | 7.40$ | 8.00$ |
20 - 29 | 7.22$ | 7.80$ |
30 - 36 | 6.95$ | 7.51$ |
N-channel transistor, 30A, TO-247, TO-247AC, 1200V - STGW30NC120HD. N-channel transistor, 30A, TO-247, TO-247AC, 1200V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 1200V. C(in): 2510pF. Cost): 175pF. Channel type: N. Trr Diode (Min.): 35 ns. Production date: 201509. Collector current: 60A. Ic(pulse): 135A. Marking on the case: GW30NC120HD. Number of terminals: 3. Pd (Power Dissipation, Max): 220W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 275 ns. Td(on): 29 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Maximum saturation voltage VCE(sat): 2.75V. Gate/emitter voltage VGE: 25V. Gate/emitter voltage VGE(th) min.: 3.75V. Gate/emitter voltage VGE(th)max.: 5.75V. Function: high current capability, High input impedance. Spec info: Very Fast PowerMESH™ IGBT. CE diode: yes. Germanium diode: no. Quantity in stock updated on 28/04/2025, 18:25.
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