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N-channel transistor, 30A, TO-247, TO-247AC, 1200V - STGW30NC120HD

N-channel transistor, 30A, TO-247, TO-247AC, 1200V - STGW30NC120HD
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Quantity excl. VAT VAT incl.
1 - 1 8.92$ 9.64$
2 - 2 8.47$ 9.16$
3 - 4 8.20$ 8.86$
5 - 9 8.02$ 8.67$
10 - 19 7.85$ 8.49$
20 - 29 7.58$ 8.19$
30 - 33 7.31$ 7.90$
Quantity U.P
1 - 1 8.92$ 9.64$
2 - 2 8.47$ 9.16$
3 - 4 8.20$ 8.86$
5 - 9 8.02$ 8.67$
10 - 19 7.85$ 8.49$
20 - 29 7.58$ 8.19$
30 - 33 7.31$ 7.90$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 33
Set of 1

N-channel transistor, 30A, TO-247, TO-247AC, 1200V - STGW30NC120HD. N-channel transistor, 30A, TO-247, TO-247AC, 1200V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 1200V. C(in): 2510pF. Cost): 175pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 35 ns. Function: high current capability, High input impedance. Germanium diode: no. Production date: 201509. Collector current: 60A. Ic(pulse): 135A. Marking on the case: GW30NC120HD. Number of terminals: 3. Pd (Power Dissipation, Max): 220W. RoHS: yes. Spec info: Very Fast PowerMESH™ IGBT. Assembly/installation: PCB through-hole mounting. Td(off): 275 ns. Td(on): 29 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Maximum saturation voltage VCE(sat): 2.75V. Gate/emitter voltage VGE: 25V. Gate/emitter voltage VGE(th) min.: 3.75V. Gate/emitter voltage VGE(th)max.: 5.75V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 16/06/2025, 17:25.

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