Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 9.83$ | 10.63$ |
2 - 2 | 9.34$ | 10.10$ |
3 - 4 | 8.85$ | 9.57$ |
5 - 9 | 8.36$ | 9.04$ |
10 - 19 | 8.16$ | 8.82$ |
20 - 29 | 7.96$ | 8.60$ |
30 - 30 | 7.67$ | 8.29$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 9.83$ | 10.63$ |
2 - 2 | 9.34$ | 10.10$ |
3 - 4 | 8.85$ | 9.57$ |
5 - 9 | 8.36$ | 9.04$ |
10 - 19 | 8.16$ | 8.82$ |
20 - 29 | 7.96$ | 8.60$ |
30 - 30 | 7.67$ | 8.29$ |
N-channel transistor, 12.6A, 20A, 10uA, 0.025 Ohms, TO-220FP, TO-220FP, 600V - STP20NM60FP. N-channel transistor, 12.6A, 20A, 10uA, 0.025 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.025 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1500pF. Cost): 350pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Id(imp): 80A. IDss (min): 1uA. Marking on the case: P20NM60FP. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 25 ns. Technology: MDmesh™ MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Function: HIGH dv/dt, Low Gate Capacitance. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 28/04/2025, 15:25.
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