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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 2.4A, 2.4A, 3.3 Ohms, TO-220FP, TO-220FP, 600V, 600V, 3.6 Ohms - STP3NK60ZFP

N-channel transistor, 2.4A, 2.4A, 3.3 Ohms, TO-220FP, TO-220FP, 600V, 600V, 3.6 Ohms - STP3NK60ZFP
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.67$ 1.81$
5 - 9 1.59$ 1.72$
10 - 24 1.54$ 1.66$
25 - 49 1.51$ 1.63$
50 - 99 1.47$ 1.59$
100 - 249 1.44$ 1.56$
250 - 1875245 1.58$ 1.71$
Quantity U.P
1 - 4 1.67$ 1.81$
5 - 9 1.59$ 1.72$
10 - 24 1.54$ 1.66$
25 - 49 1.51$ 1.63$
50 - 99 1.47$ 1.59$
100 - 249 1.44$ 1.56$
250 - 1875245 1.58$ 1.71$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1875245
Set of 1

N-channel transistor, 2.4A, 2.4A, 3.3 Ohms, TO-220FP, TO-220FP, 600V, 600V, 3.6 Ohms - STP3NK60ZFP. N-channel transistor, 2.4A, 2.4A, 3.3 Ohms, TO-220FP, TO-220FP, 600V, 600V, 3.6 Ohms. ID (T=25°C): 2.4A. Idss (max): 2.4A. On-resistance Rds On: 3.3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Drain-source voltage (Vds): 600V. On-resistance Rds On: 3.6 Ohms. Channel type: N. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Technology: SuperMESH Power MOSFET. Type of transistor: MOSFET power transistor. Max drain current: 2.4A. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 16/06/2025, 11:25.

Technical documentation

Equivalent products :

Quantity in stock : 48
STF3NK80Z

STF3NK80Z

N-channel transistor, 1.57A, 2.5A, 50uA, 3.8 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 1.57A. I...
STF3NK80Z
N-channel transistor, 1.57A, 2.5A, 50uA, 3.8 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50uA. On-resistance Rds On: 3.8 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. C(in): 485pF. Cost): 57pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: yes. Id(imp): 10A. IDss (min): 1uA. Marking on the case: F3NK80Z. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 17 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V
STF3NK80Z
N-channel transistor, 1.57A, 2.5A, 50uA, 3.8 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50uA. On-resistance Rds On: 3.8 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. C(in): 485pF. Cost): 57pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: yes. Id(imp): 10A. IDss (min): 1uA. Marking on the case: F3NK80Z. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 17 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V
Set of 1
2.01$ VAT incl.
(1.86$ excl. VAT)
2.01$

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