N-channel transistor, 0.189A, 0.3A, 50uA, 13 Ohms, TO-92, TO-92Ammopak, 600V - STQ1NK60ZR-AP

Quantity	excl. VAT	VAT incl.
1 - 4	1.27$	1.37$
5 - 9	1.21$	1.31$
10 - 24	1.14$	1.23$
25 - 49	1.08$	1.17$
50 - 99	1.05$	1.14$
100 - 249	1.03$	1.11$
250 - 1933	0.89$	0.96$

Quantity	U.P
1 - 4	1.27$	1.37$
5 - 9	1.21$	1.31$
10 - 24	1.14$	1.23$
25 - 49	1.08$	1.17$
50 - 99	1.05$	1.14$
100 - 249	1.03$	1.11$
250 - 1933	0.89$	0.96$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 1933

Set of 1

N-channel transistor, 0.189A, 0.3A, 50uA, 13 Ohms, TO-92, TO-92Ammopak, 600V - STQ1NK60ZR-AP. N-channel transistor, 0.189A, 0.3A, 50uA, 13 Ohms, TO-92, TO-92Ammopak, 600V. ID (T=100°C): 0.189A. ID (T=25°C): 0.3A. Idss (max): 50uA. On-resistance Rds On: 13 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92Ammopak. Voltage Vds(max): 600V. C(in): 94pF. Cost): 17.6pF. Channel type: N. Trr Diode (Min.): 135 ns. Type of transistor: MOSFET. Id(imp): 1.2A. IDss (min): 1uA. Marking on the case: 1NK60ZR. Pd (Power Dissipation, Max): 3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 5.5 ns. Technology: SuperMESH™ Power MOSFET. Operating temperature: -50...+150°C. Gate/emitter voltage VGE(th) min.: 3V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Quantity per case: 1. Function: Zener-protected, ESD improved capability. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 29/04/2025, 11:25.

Technical documentation