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N-channel transistor, 12A, 19A, 50mA, 0.34 Ohms, TO-247, TO-247, 800V - STW18NK80Z

N-channel transistor, 12A, 19A, 50mA, 0.34 Ohms, TO-247, TO-247, 800V - STW18NK80Z
Quantity excl. VAT VAT incl.
1 - 1 11.02$ 11.91$
2 - 2 10.47$ 11.32$
3 - 4 10.14$ 10.96$
5 - 9 9.92$ 10.72$
10 - 19 9.70$ 10.49$
20 - 29 9.37$ 10.13$
30+ 9.04$ 9.77$
Quantity U.P
1 - 1 11.02$ 11.91$
2 - 2 10.47$ 11.32$
3 - 4 10.14$ 10.96$
5 - 9 9.92$ 10.72$
10 - 19 9.70$ 10.49$
20 - 29 9.37$ 10.13$
30+ 9.04$ 9.77$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 12A, 19A, 50mA, 0.34 Ohms, TO-247, TO-247, 800V - STW18NK80Z. N-channel transistor, 12A, 19A, 50mA, 0.34 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 12A. ID (T=25°C): 19A. Idss (max): 50mA. On-resistance Rds On: 0.34 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 6100pF. Cost): 500pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 920 ns. Type of transistor: MOSFET. Function: 'EXTREMELY HIGH dv/dt CAPABILITY'. G-S Protection: yes. Id(imp): 76A. IDss (min): 1uA. Marking on the case: W18NK80Z. Number of terminals: 3. Pd (Power Dissipation, Max): 350W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 46 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 16/06/2025, 03:25.

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