N-channel transistor YJP200G06A, 60V, 0.0029 Ohms, TO-220AB
Quantity
Unit price
1-9
2.56$
10-19
2.05$
20-29
1.88$
30-49
1.71$
50-149
1.58$
150+
1.54$
| Quantity in stock: 369 |
N-channel transistor YJP200G06A, 60V, 0.0029 Ohms, TO-220AB. Drain-source voltage (Vds): 60V. On-resistance Rds On: 0.0029 Ohms. Housing: TO-220AB. Channel type: N. Max drain current: 200A. Power: 260W. Type of transistor: MOSFET power transistor. Original product from manufacturer: Yangjie Electronic Technology. Quantity in stock updated on 12/11/2025, 05:18
YJP200G06A
8 parameters
Drain-source voltage (Vds)
60V
On-resistance Rds On
0.0029 Ohms
Housing
TO-220AB
Channel type
N
Max drain current
200A
Power
260W
Type of transistor
MOSFET power transistor
Original product from manufacturer
Yangjie Electronic Technology