NPN bipolar transistors

NPN transistor, 2.5A, 1500V. Collector current: 2.5A. Collector/emitter voltage Vceo: 1500V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN

NPN transistor, 3A, TO-220FP, 2-10R1A, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): 2-10R1A. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 35pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Marking on the case: D2012. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) 2SB1366. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V

NPN transistor, PCB soldering, TO-220FP, 3A, TO-220, TO-220, 80V. Housing: PCB soldering. Housing: TO-220FP. Collector current Ic [A], max.: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 80V. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 80V/60V. Maximum dissipation Ptot [W]: 30W. Manufacturer's marking: silicon. Cutoff frequency ft [MHz]: 3A. Operating temperature range min (°C): 30W. Operating temperature range max (°C): PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 3A, TO-220, TO-220, 80V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Function: insulated package transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 3.5A, TO-3PF ( SOT399 / 2-16E3A ), 600V. Collector current: 3.5A. Housing: TO-3PF ( SOT399 / 2-16E3A ). Collector/emitter voltage Vceo: 600V. BE diode: no. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V

NPN transistor, 6A, 600V. Collector current: 6A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10A, 110V. Collector current: 10A. Collector/emitter voltage Vceo: 110V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 100W. Type of transistor: NPN

BE diode: NINCS. CE diode: NINCS. Collector current: 5A. Collector/emitter voltage Vceo: 20V. Cost): 30pF. Housing: TO-126F. Housing (according to data sheet): TO-126FP. Id(imp): 10A. Max hFE gain: 390. Maximum saturation voltage VCE(sat): 1V. Minimum hFE gain: 120. Saturation voltage VCE(sat): 0.25V. Semiconductor material: silicon. Type of transistor: NPN. Vcbo: 50V. Vebo: 6V. FT: 150 MHz

NPN transistor, 8A, TO-264 ( TOP-3L ), TOP-3L, 160V. Collector current: 8A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TOP-3L. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: Optimum for 120W Hi-Fi output. Max hFE gain: 20000. Minimum hFE gain: 3500. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple diffusion planar type darlington'. Tf(max): 1.2us. Tf(min): 1.2us. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN transistor, 0.3A, 30 v. Collector current: 0.3A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: TV-HA. Pd (Power Dissipation, Max): 0.25W. Type of transistor: NPN

NPN transistor, 3A, TO-3PF (SOT399, 2-16E3A), TO-3FP, 600V. Collector current: 3A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3FP. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 60W. Spec info: IBp=2A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

Assembly/installation: PCB through-hole mounting. Collector current: 3A. Collector/emitter voltage Vceo: 60V. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Max hFE gain: 250. Minimum hFE gain: 120. Number of terminals: 3 pieces. ROHS: yes. Semiconductor material: silicon. Type of transistor: NPN. Vcbo: 60V

NPN transistor, 3A, TO-220FP, TO-220F, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50MHz. Function: Power amplification with high forward current. Max hFE gain: 1000. Minimum hFE gain: 500. Ic(pulse): 6A. Temperature: +150°C. Assembly/installation: PCB through-hole mounting. Technology: 2.37k Ohms. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Vebo: 6V

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P ( MT-100 ), 150V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P ( MT-100 ). Collector/emitter voltage Vceo: 150V. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 55 MHz. Function: hFE 5000. Minimum hFE gain: 5000. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. Spec info: complementary transistor (pair) 2SB1560. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V

NPN transistor, 2A, SOT-89, SOT-89, 60V. Collector current: 2A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Function: S Io-sat. Note: screen printing/SMD code DT. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) 2SB1561. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN

NPN transistor, 3A, TO-220FP, TO-220FN, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Max hFE gain: 320. Minimum hFE gain: 100. Ic(pulse): 6A. Marking on the case: D2394. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Vebo: 7V

NPN transistor, 3A, TO-220FP, TO-220FN, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 55pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 2000. Minimum hFE gain: 1000. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.3V. Vebo: 6V

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 150V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 150V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 5000. Pd (Power Dissipation, Max): 150W. Spec info: complementary transistor (pair) 2SB1588. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 160V

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: hFE 5000. Collector current: 8A. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V. Spec info: complementary transistor 2SB1587

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 160V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 55 MHz. Function: hFE 5000. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) 2SB1588. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 6A, 110V. Collector current: 6A. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Note: >5000. Pd (Power Dissipation, Max): 60W. Spec info: complementary transistor (pair) 2SB1625. Type of transistor: NPN

NPN transistor, 6A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 6A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. BE diode: no. BE resistor: 40 Ohms. Cost): 95pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: CTV-HA. Max hFE gain: 25. Minimum hFE gain: 5. Ic(pulse): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 5V

NPN transistor, 6A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 6A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. BE diode: no. BE resistor: 40 Ohms. Cost): 95pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: CTV-HA. Max hFE gain: 25. Minimum hFE gain: 5. Ic(pulse): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Spec info: Rbe 40 Ohms. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 5V

NPN transistor, 8A, 700V. Collector current: 8A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA Hi-r. Note: Vce(sat)=5V. Pd (Power Dissipation, Max): 50W. Spec info: Rbe 50 Ohms. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1700V. Vebo: 5V

NPN transistor, 80V, 3A, MT-3-A1. Collector-Emitter Voltage VCEO: 80V. Collector current: 3A. Housing: MT-3-A1. Type of transistor: NPN power transistor. Polarity: NPN. Power: 1.5W. Max frequency: 50 MHz