NPN bipolar transistors

NPN transistor, 0.4A, TO-39 ( TO-205 ), TO-39, 30 v. Collector current: 0.4A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 30 v. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 500 MHz. Function: VHF/UHF-O. Max hFE gain: 200. Minimum hFE gain: 10. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 55V. Saturation voltage VCE(sat): 1V

NPN transistor, TO-92, 100mA, TO-92, 40V. Housing: TO-92. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): 8pF. Cost): 4pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Spec info: hFE 100-300 (IC=10mAdc, VCE=1.0Vdc). Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Die Construction'. Tf(max): 75 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V

NPN transistor, TO-92, 200mA, 40V, 0.2A. Housing: TO-92. Collector current Ic [A], max.: 200mA. Collector-Emitter Voltage VCEO: 40V. Collector current: 0.2A. Manufacturer's marking: 2N3904. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.625W. Max frequency: 300MHz

NPN transistor, 0.6A, TO-92, TO-92 ( Ammo Pack ), 40V. Collector current: 0.6A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 40V. BE diode: no. C(in): 30pF. Cost): 6.5pF. CE diode: no. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Max hFE gain: 300. Minimum hFE gain: 20. Ic(pulse): 0.9A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 6V

NPN transistor, 100mA, TO-92, TO-92, 30 v. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. BE diode: no. C(in): 10pF. Cost): 4pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: HI-FI low noise pre-amplifier. Max hFE gain: 900. Minimum hFE gain: 300. Number of terminals: 3. Pd (Power Dissipation, Max): 625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 35V. Maximum saturation voltage VCE(sat): 0.5V

NPN transistor, 0.4A, TO-39 ( TO-205 ), TO-39, 20V. Collector current: 0.4A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 20V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 1.2GHz. Max hFE gain: 210. Minimum hFE gain: 70. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.5V. Vebo: 3V

NPN transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 4pF. CE diode: no. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI low noise pre-amplifier. Max hFE gain: 600. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 4.5V

NPN transistor, TO-92, 0.6A, TO-92, 160V. Housing: TO-92. Collector current: 0.6A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 160V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: VIDEO amp.. Max hFE gain: 250. Minimum hFE gain: 80. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Maximum saturation voltage VCE(sat): 0.2V. Vebo: 6V

NPN transistor, PCB soldering, TO-92, 600mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 600mA. RoHS: yes. Component family: NPN transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 5551. Collector-emitter voltage Uceo [V]: 160V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.6A, M135, 18V. Collector current: 0.6A. Housing (according to data sheet): M135. Collector/emitter voltage Vceo: 18V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 175 MHz. Function: Transistor VHF-L 130...230MHz. Minimum hFE gain: 5. Pd (Power Dissipation, Max): 15W. Type of transistor: NPN. Vcbo: 36V. Vebo: 4 v

NPN transistor, 25A, TO-3 ( TO-204 ), TO-3, 80V. Collector current: 25A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 80V. BE diode: no. Cost): 500pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 100. Minimum hFE gain: 20. Ic(pulse): 50A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) 2N5884. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Tf(min): 0.8us. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, PCB soldering, TO-3, 25mA. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 25mA. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N5886G. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN transistor, 12A, 100V. Collector current: 12A. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Minimum hFE gain: 750. Note: b>750. Pd (Power Dissipation, Max): 150W. Type of transistor: NPN

NPN transistor, 5A, M135, 36V. Collector current: 5A. Housing (according to data sheet): M135. Collector/emitter voltage Vceo: 36V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 175 MHz. Function: VHF-O Tr. Pd (Power Dissipation, Max): 12W. Spec info: SD1012. Type of transistor: NPN

NPN transistor, 20A, TO-3 ( TO-204 ), TO-3, 100V. Collector current: 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 100V. BE diode: no. BE resistor: 8k Ohms (R1), 60 Ohms (R2). Cost): 400pF. CE diode: yes. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: kHz. Function: hFE 750...180000. Max hFE gain: 18000. Minimum hFE gain: 750. Ic(pulse): 40A. Number of terminals: 2. Pd (Power Dissipation, Max): 160W. RoHS: yes. Spec info: complementary transistor (pair) 2N6287. Weight: 11.8g. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, 15A, TO-220, TO-220, 80V. Collector current: 15A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Function: Amplifier and switching applications. Max hFE gain: 150. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: complementary transistor (pair) 2N6491. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+165°C. Vcbo: 90V. Saturation voltage VCE(sat): 1.3V. Maximum saturation voltage VCE(sat): 3.5V. Vebo: 5V

NPN transistor, 15A, TO-220, TO-220, 90V. Collector current: 15A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 90V. Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Pd (Power Dissipation, Max): 75W. Spec info: complementary transistor (pair) 2N6491. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-220, 15mA. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 15mA. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N6488G. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 5 MHz. Maximum dissipation Ptot [W]: 0.075W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.5A, TO-92, TO-92, 350V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 350V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 40MHz (min), 200MHz (max). Max hFE gain: 200. Minimum hFE gain: 20. Pd (Power Dissipation, Max): 0.625W. Spec info: complementary transistor (pair) 2N6520. Assembly/installation: PCB through-hole mounting. Technology: NPN Epitaxial Silicon Transistor. Type of transistor: NPN. Vcbo: 350V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Vebo: 6V

NPN transistor, 17A, MT-200, 200V. Collector current: 17A. Housing (according to data sheet): MT-200. Collector/emitter voltage Vceo: 200V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Type of transistor: PNP & NPN

NPN transistor, 6A, TO-220, TO-220, 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1+1. Semiconductor material: silicon. FT: 100 MHz. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP & NPN

NPN transistor, 0.6A, 50V. Collector current: 0.6A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Pd (Power Dissipation, Max): 0.6W. Type of transistor: NPN

NPN transistor, PCB soldering, TO-202, 3A. Housing: PCB soldering. Housing: TO-202. Collector current Ic [A], max.: 3A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 70V/45V. Maximum dissipation Ptot [W]: 10W

NPN transistor, 0.1A, 210V. Collector current: 0.1A. Collector/emitter voltage Vceo: 210V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 7.9W. Spec info: 8-726-720-00. Type of transistor: NPN

NPN transistor, 2.5A, TO-126 (TO-225, SOT-32), TO-126 (MOD), 35V. Collector current: 2.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126 (MOD). Collector/emitter voltage Vceo: 35V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 320. Minimum hFE gain: 60. Ic(pulse): 3A. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 35V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1V