NPN bipolar transistors

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3P(H)IS, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3P(H)IS. Collector/emitter voltage Vceo: 800V. BE diode: no. Cost): 145pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA Hi-re. Ic(pulse): 30A. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.35us. Type of transistor: NPN. Vcbo: 1500V. Maximum saturation voltage VCE(sat): 1.1V

NPN transistor, 12A, SOT-199, 800V. Collector current: 12A. Housing: SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA hi-re. Pd (Power Dissipation, Max): 45W. Spec info: SOT199 (F). Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 12A, 800V. Collector current: 12A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA hi-re. Pd (Power Dissipation, Max): 45W. RoHS: yes. Spec info: SOT399 (F). Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA hi-re (F). Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA hi-re (F). Number of terminals: 3. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 16A, 800V. Collector current: 16A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: monitor. Pd (Power Dissipation, Max): 125W. Spec info: 1.4...1.8us. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, 825V. Collector current: 8A. Collector/emitter voltage Vceo: 825V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 45W. Spec info: Ts 4.8us, Tf 0.4us. Type of transistor: NPN. Vcbo: 1700V

NPN transistor, 8A, 825V. Collector current: 8A. Collector/emitter voltage Vceo: 825V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 45W. Spec info: 4.8us. Type of transistor: NPN. Vcbo: 1700V

NPN transistor, 10A, 825V. Collector current: 10A. Collector/emitter voltage Vceo: 825V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Note: MONITOR. Pd (Power Dissipation, Max): 45W. Spec info: 7.4us. Type of transistor: NPN. Vcbo: 1700V

NPN transistor, 12A, 1700V. Collector current: 12A. Collector/emitter voltage Vceo: 1700V. Quantity per case: 1. Semiconductor material: silicon. Function: Power Transistor. Note: MONITOR 16KHz. Spec info: Rbe 70 Ohms, SOT199 (TO-247F). Type of transistor: NPN

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 1700V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 1700V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: MONITOR 16KHz. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 0.3us. Tf(min): 0.14us. Type of transistor: NPN. Saturation voltage VCE(sat): 1V. Vebo: 7.5V

NPN transistor, 12A, 825V. Collector current: 12A. Collector/emitter voltage Vceo: 825V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Note: MONITOR. Pd (Power Dissipation, Max): 45W. Spec info: 2.5us. Type of transistor: NPN. Vcbo: 1700V

NPN transistor, PCB soldering, TO-3, 6A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 6A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 160V/100V. Maximum dissipation Ptot [W]: 25W

NPN transistor, PCB soldering, TO-3, 6A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 6A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 280V/150V. Maximum dissipation Ptot [W]: 25W

NPN transistor, 600V, 10A, TO-3. Collector-Emitter Voltage VCEO: 600V. Collector current: 10A. Housing: TO-3. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Power: 175W. Max frequency: 10MHz. DC Collector/Base Gain hFE min.: 150

NPN transistor, 7A, TO-220, TO-220, 200V. Collector current: 7A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 200V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 6 MHz. Function: TV-HA. Max hFE gain: 20. Minimum hFE gain: 12. Ic(pulse): 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 400V. Saturation voltage VCE(sat): 1V. Vebo: 6V

NPN transistor, 7A, TO-220, 200V, 200V. Collector current: 7A. Housing: TO-220. Collector/emitter voltage Vceo: 200V. Collector-Emitter Voltage VCEO: 200V. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN. Vcbo: 400V. Type of transistor: Power Transistor. Polarity: NPN. Power: 60W. Max frequency: 10MHz

NPN transistor, PCB soldering, TO-3, 10A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 10A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 175V. Maximum dissipation Ptot [W]: 60W

NPN transistor, 12A, 375V. Collector current: 12A. Collector/emitter voltage Vceo: 375V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L TV-HA. Pd (Power Dissipation, Max): 120W. Type of transistor: NPN. Vcbo: 850V

NPN transistor, 12A, 400V. Collector current: 12A. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L TV-HA. Pd (Power Dissipation, Max): 120W. Type of transistor: NPN. Vcbo: 900V

NPN transistor, 6A, 375V. Collector current: 6A. Collector/emitter voltage Vceo: 375V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L TV-SN. Pd (Power Dissipation, Max): 70W. Type of transistor: NPN. Vcbo: 800V

NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA/Monitor. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, SOT-199, SOT-199, 800V. Collector current: 8A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA/Monitor. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA/Monitor. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, SOT-199, SOT-199, 800V. Collector current: 8A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA/Monitor. Max hFE gain: 7.3. Minimum hFE gain: 4.2. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Spec info: Rbe 25 Ohms. Assembly/installation: PCB through-hole mounting. Tf(max): 400 ns. Tf(min): 300 ns. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 13.5V