Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.52$ | 1.64$ |
5 - 9 | 1.45$ | 1.57$ |
10 - 24 | 1.37$ | 1.48$ |
25 - 49 | 1.29$ | 1.39$ |
50 - 99 | 1.26$ | 1.36$ |
100 - 249 | 1.50$ | 1.62$ |
250 - 391 | 1.80$ | 1.95$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.52$ | 1.64$ |
5 - 9 | 1.45$ | 1.57$ |
10 - 24 | 1.37$ | 1.48$ |
25 - 49 | 1.29$ | 1.39$ |
50 - 99 | 1.26$ | 1.36$ |
100 - 249 | 1.50$ | 1.62$ |
250 - 391 | 1.80$ | 1.95$ |
NPN transistor, 0.8A, TO-39 ( TO-205 ), TO-39, 40V - 2N2219A. NPN transistor, 0.8A, TO-39 ( TO-205 ), TO-39, 40V. Collector current: 0.8A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 40V. RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): 25pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Vebo: 6V. BE diode: no. CE diode: no. Quantity in stock updated on 27/04/2025, 15:25.
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