NPN-Transistor 2N3906, TO-92, 40V, 200mA, 100mA, TO-92Ammo-Pack, 40V

NPN-Transistor 2N3906, TO-92, 40V, 200mA, 100mA, TO-92Ammo-Pack, 40V

Quantity
Unit price
10-49
0.0586$
50-99
0.0510$
100-199
0.0453$
200+
0.0380$
+892 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 3161
Minimum: 10

NPN-Transistor 2N3906, TO-92, 40V, 200mA, 100mA, TO-92Ammo-Pack, 40V. Housing: TO-92. Housing (JEDEC standard): -. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 200mA. Collector current: 100mA. Housing (according to data sheet): TO-92Ammo-Pack. Collector/emitter voltage Vceo: 40V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 0.2A. Component family: PNP transistor. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: 250 MHz. FT: 250 MHz. Ic(pulse): 200mA. Manufacturer's marking: 2N3906. Max hFE gain: 300. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.625W. Minimum hFE gain: 100. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Packaging: Ammo Pack. Pd (Power Dissipation, Max): 0.625W. Polarity: bipolar. Power: 0.625W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.25V. Semiconductor material: silicon. Technology: Si-Epitaxial PlanarTransistor. Type of transistor: PNP. Vcbo: 40V. Vebo: 5V. Voltage (collector - emitter): 40V. Original product from manufacturer: Diodes Inc. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 01:37

Technical documentation (PDF)
2N3906
38 parameters
Housing
TO-92
Collector-emitter voltage Uceo [V]
40V
Collector current Ic [A], max.
200mA
Collector current
100mA
Housing (according to data sheet)
TO-92Ammo-Pack
Collector/emitter voltage Vceo
40V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Collector current Ic [A]
0.2A
Component family
PNP transistor
Configuration
PCB through-hole mounting
Cutoff frequency ft [MHz]
250 MHz
FT
250 MHz
Ic(pulse)
200mA
Manufacturer's marking
2N3906
Max hFE gain
300
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.625W
Minimum hFE gain
100
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Packaging
Ammo Pack
Pd (Power Dissipation, Max)
0.625W
Polarity
bipolar
Power
0.625W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.25V
Semiconductor material
silicon
Technology
Si-Epitaxial PlanarTransistor
Type of transistor
PNP
Vcbo
40V
Vebo
5V
Voltage (collector - emitter)
40V
Original product from manufacturer
Diodes Inc
Minimum quantity
10