NPN-Transistor 2N4403, TO-92, TO-226, 40V, 600mA, 0.6A, TO-92Ammo Pack, 40V

NPN-Transistor 2N4403, TO-92, TO-226, 40V, 600mA, 0.6A, TO-92Ammo Pack, 40V

Quantity
Unit price
10-49
0.0814$
50-99
0.0705$
100-199
0.0619$
200+
0.0519$
+1240 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Equivalence available
Quantity in stock: 1264
Minimum: 10

NPN-Transistor 2N4403, TO-92, TO-226, 40V, 600mA, 0.6A, TO-92Ammo Pack, 40V. Housing: TO-92. Housing (JEDEC standard): TO-226. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 600mA. Collector current: 0.6A. Housing (according to data sheet): TO-92Ammo Pack. Collector/emitter voltage Vceo: 40V. Assembly/installation: PCB through-hole mounting. BE diode: no. C(in): 30pF. CE diode: no. Collector current Ic [A]: 600mA. Component family: PNP transistor. Conditioning unit: 2000. Conditioning: Ammo Pack. Configuration: PCB through-hole mounting. Cost): 8.5pF. Cutoff frequency ft [MHz]: 200 MHz. FT: 200 MHz. Frequency: 200MHz. Manufacturer's marking: 2N4403. Max hFE gain: 300. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.625W. Maximum saturation voltage VCE(sat): 0.75V. Minimum hFE gain: 30. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.625W. Polarity: bipolar. Power: 0.625W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.4V. Semiconductor material: silicon. Tf(max): 30 ns. Type of transistor: PNP. Vcbo: 40V. Vebo: 5V. Voltage (collector - emitter): 40V. Original product from manufacturer: Diotec Semiconductor. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 01:37

Technical documentation (PDF)
2N4403
43 parameters
Housing
TO-92
Housing (JEDEC standard)
TO-226
Collector-emitter voltage Uceo [V]
40V
Collector current Ic [A], max.
600mA
Collector current
0.6A
Housing (according to data sheet)
TO-92Ammo Pack
Collector/emitter voltage Vceo
40V
Assembly/installation
PCB through-hole mounting
BE diode
no
C(in)
30pF
CE diode
no
Collector current Ic [A]
600mA
Component family
PNP transistor
Conditioning unit
2000
Conditioning
Ammo Pack
Configuration
PCB through-hole mounting
Cost)
8.5pF
Cutoff frequency ft [MHz]
200 MHz
FT
200 MHz
Frequency
200MHz
Manufacturer's marking
2N4403
Max hFE gain
300
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.625W
Maximum saturation voltage VCE(sat)
0.75V
Minimum hFE gain
30
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.625W
Polarity
bipolar
Power
0.625W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.4V
Semiconductor material
silicon
Tf(max)
30 ns
Type of transistor
PNP
Vcbo
40V
Vebo
5V
Voltage (collector - emitter)
40V
Original product from manufacturer
Diotec Semiconductor
Minimum quantity
10

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