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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 0.05A, TO-92, TO-92L ( SC-51 ) ( 9mm ), 150V - 2SA1124

NPN-Transistor, 0.05A, TO-92, TO-92L ( SC-51 ) ( 9mm ), 150V - 2SA1124
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 3.80$ 4.11$
5 - 9 3.61$ 3.90$
10 - 24 3.49$ 3.77$
25 - 49 3.42$ 3.70$
50 - 99 3.34$ 3.61$
100 - 249 3.23$ 3.49$
250+ 3.11$ 3.36$
Quantity U.P
1 - 4 3.80$ 4.11$
5 - 9 3.61$ 3.90$
10 - 24 3.49$ 3.77$
25 - 49 3.42$ 3.70$
50 - 99 3.34$ 3.61$
100 - 249 3.23$ 3.49$
250+ 3.11$ 3.36$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NPN-Transistor, 0.05A, TO-92, TO-92L ( SC-51 ) ( 9mm ), 150V - 2SA1124. NPN-Transistor, 0.05A, TO-92, TO-92L ( SC-51 ) ( 9mm ), 150V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92L ( SC-51 ) ( 9mm ). Collector/emitter voltage Vceo: 150V. BE diode: no. Cost): 5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 330. Minimum hFE gain: 185. Ic(pulse): 0.1A. Marking on the case: A1124 S. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 150V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Original product from manufacturer Panasonic. Quantity in stock updated on 15/06/2025, 18:25.

Technical documentation

Equivalent products :

Quantity in stock : 3
2SA1145

2SA1145

NPN-Transistor, 50mA, TO-92, TO-92MOD ( 2-5J1A ), 150V. Collector current: 50mA. Housing: TO-92. Hou...
2SA1145
NPN-Transistor, 50mA, TO-92, TO-92MOD ( 2-5J1A ), 150V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 150V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: audio amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Note: 9mm. Marking on the case: A1145 O. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Spec info: complementary transistor (pair) 2SC2705. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: PNP. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Vebo: 5V
2SA1145
NPN-Transistor, 50mA, TO-92, TO-92MOD ( 2-5J1A ), 150V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 150V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: audio amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Note: 9mm. Marking on the case: A1145 O. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Spec info: complementary transistor (pair) 2SC2705. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: PNP. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Vebo: 5V
Set of 1
2.09$ VAT incl.
(1.93$ excl. VAT)
2.09$
Quantity in stock : 4
2SA1208

2SA1208

NPN-Transistor, 0.07A, TO-92, SANYO--MP, 160V. Collector current: 0.07A. Housing: TO-92. Housing (ac...
2SA1208
NPN-Transistor, 0.07A, TO-92, SANYO--MP, 160V. Collector current: 0.07A. Housing: TO-92. Housing (according to data sheet): SANYO--MP. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: High-Voltage Switching. Ic(pulse): 0.14A. Note: 9mm height. Pd (Power Dissipation, Max): 0.9W. Spec info: complementary transistor (pair) 2SC2910. Type of transistor: PNP. Vcbo: 180V. Saturation voltage VCE(sat): 0.14V. Maximum saturation voltage VCE(sat): 0.4V. Vebo: 6V
2SA1208
NPN-Transistor, 0.07A, TO-92, SANYO--MP, 160V. Collector current: 0.07A. Housing: TO-92. Housing (according to data sheet): SANYO--MP. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: High-Voltage Switching. Ic(pulse): 0.14A. Note: 9mm height. Pd (Power Dissipation, Max): 0.9W. Spec info: complementary transistor (pair) 2SC2910. Type of transistor: PNP. Vcbo: 180V. Saturation voltage VCE(sat): 0.14V. Maximum saturation voltage VCE(sat): 0.4V. Vebo: 6V
Set of 1
1.85$ VAT incl.
(1.71$ excl. VAT)
1.85$
Quantity in stock : 18
2SA1370

2SA1370

NPN-Transistor, 100mA, TO-92, TO-92M ( 9mm ), 200V. Collector current: 100mA. Housing: TO-92. Housin...
2SA1370
NPN-Transistor, 100mA, TO-92, TO-92M ( 9mm ), 200V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 200V. BE diode: no. C(in): 1.7pF. Cost): 2.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: video. Max hFE gain: 320. Minimum hFE gain: 40. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V
2SA1370
NPN-Transistor, 100mA, TO-92, TO-92M ( 9mm ), 200V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 200V. BE diode: no. C(in): 1.7pF. Cost): 2.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: video. Max hFE gain: 320. Minimum hFE gain: 40. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V
Set of 1
3.52$ VAT incl.
(3.26$ excl. VAT)
3.52$

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