Quantity (Set of 5) | excl. VAT | VAT incl. |
---|---|---|
1 - 2 | 1.21$ | 1.31$ |
3 - 4 | 1.15$ | 1.24$ |
5 - 9 | 1.09$ | 1.18$ |
10 - 19 | 1.06$ | 1.15$ |
20 - 49 | 1.03$ | 1.11$ |
50 - 99 | 0.99$ | 1.07$ |
100 - 2000000 | 0.94$ | 1.02$ |
Quantity (Set of 5) | U.P | |
---|---|---|
1 - 2 | 1.21$ | 1.31$ |
3 - 4 | 1.15$ | 1.24$ |
5 - 9 | 1.09$ | 1.18$ |
10 - 19 | 1.06$ | 1.15$ |
20 - 49 | 1.03$ | 1.11$ |
50 - 99 | 0.99$ | 1.07$ |
100 - 2000000 | 0.94$ | 1.02$ |
NPN-Transistor, 0.15A, TO-92, 50V - 2SA1266. NPN-Transistor, 0.15A, TO-92, 50V. Collector current: 0.15A. Housing: TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 4pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: general purpose. Max hFE gain: 400. Minimum hFE gain: 70. Pd (Power Dissipation, Max): 0.4W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Maximum saturation voltage VCE(sat): 0.3V. Vebo: 5V. Original product from manufacturer Korea Electronics Semi.. Quantity in stock updated on 15/06/2025, 17:25.
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