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NPN-Transistor, 17A, MT-200, 230V - 2SA1295-SKN

NPN-Transistor, 17A, MT-200, 230V - 2SA1295-SKN
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 17.64$ 19.07$
2 - 2 16.76$ 18.12$
3 - 4 16.41$ 17.74$
5 - 9 15.88$ 17.17$
10 - 14 15.52$ 16.78$
15 - 19 14.99$ 16.20$
20+ 14.47$ 15.64$
Quantity U.P
1 - 1 17.64$ 19.07$
2 - 2 16.76$ 18.12$
3 - 4 16.41$ 17.74$
5 - 9 15.88$ 17.17$
10 - 14 15.52$ 16.78$
15 - 19 14.99$ 16.20$
20+ 14.47$ 15.64$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NPN-Transistor, 17A, MT-200, 230V - 2SA1295-SKN. NPN-Transistor, 17A, MT-200, 230V. Collector current: 17A. Housing (according to data sheet): MT-200. Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Pd (Power Dissipation, Max): 200W. Spec info: complementary transistor (pair) 2SC3264. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Original product from manufacturer Sanken. Quantity in stock updated on 15/06/2025, 18:25.

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Quantity in stock : 92
MJ21195

MJ21195

NPN-Transistor, 16A, TO-3 ( TO-204 ), TO-3 ( TO-204AA ), 250V. Collector current: 16A. Housing: TO-3...
MJ21195
NPN-Transistor, 16A, TO-3 ( TO-204 ), TO-3 ( TO-204AA ), 250V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204AA ). Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 4pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ21196. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V
MJ21195
NPN-Transistor, 16A, TO-3 ( TO-204 ), TO-3 ( TO-204AA ), 250V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204AA ). Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 4pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ21196. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V
Set of 1
20.83$ VAT incl.
(19.27$ excl. VAT)
20.83$
Quantity in stock : 157
MJW21195

MJW21195

NPN-Transistor, 16A, TO-247, TO-247, 250V. Collector current: 16A. Housing: TO-247. Housing (accordi...
MJW21195
NPN-Transistor, 16A, TO-247, TO-247, 250V. Collector current: 16A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 250V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity. Production date: 2015/04. Max hFE gain: 80. Minimum hFE gain: 20. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJW21196. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1V. Vebo: 5V
MJW21195
NPN-Transistor, 16A, TO-247, TO-247, 250V. Collector current: 16A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 250V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity. Production date: 2015/04. Max hFE gain: 80. Minimum hFE gain: 20. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJW21196. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1V. Vebo: 5V
Set of 1
11.60$ VAT incl.
(10.73$ excl. VAT)
11.60$
Quantity in stock : 4
2SA1295

2SA1295

NPN-Transistor, 17A, 230V. Collector current: 17A. Collector/emitter voltage Vceo: 230V. Quantity pe...
2SA1295
NPN-Transistor, 17A, 230V. Collector current: 17A. Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Pd (Power Dissipation, Max): 200W. Spec info: complementary transistor (pair) 2SC3264. Type of transistor: PNP
2SA1295
NPN-Transistor, 17A, 230V. Collector current: 17A. Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Pd (Power Dissipation, Max): 200W. Spec info: complementary transistor (pair) 2SC3264. Type of transistor: PNP
Set of 1
6.00$ VAT incl.
(5.55$ excl. VAT)
6.00$

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